CSD87502Q2 Series

30-V, N channel NexFET™ power MOSFET, dual SON 2 mm x 2, 42 mOhm, gate ESD protection

Catalog

30-V, N channel NexFET™ power MOSFET, dual SON 2 mm x 2, 42 mOhm, gate ESD protection

Part	Power - Max [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	FET Feature	Supplier Device Package	Rds On (Max) @ Id, Vgs	Configuration	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Technology
Texas Instruments CSD87502Q2T	2.3 W	Surface Mount	30 V	2 V	6 nC	5V Drive Logic Level Gate	6-WSON (2x2)	32.4 mOhm	2 N-Channel (Dual)	-55 °C	150 °C	5 A	353 pF	MOSFET (Metal Oxide)

Catalog

30-V, N channel NexFET™ power MOSFET, dual SON 2 mm x 2, 42 mOhm, gate ESD protection

Key Features

• Low On-ResistanceDual Independent MOSFETsSpace Saving SON 2 × 2 mm Plastic PackageOptimized for 5 V Gate DriverAvalanche RatedPb and Halogen FreeRoHS CompliantLow On-ResistanceDual Independent MOSFETsSpace Saving SON 2 × 2 mm Plastic PackageOptimized for 5 V Gate DriverAvalanche RatedPb and Halogen FreeRoHS Compliant

Description

The CSD87502Q2 is a 30 V, 27 mΩ N-Channel device with dual independent MOSFETs in a SON 2 x 2 mm plastic package. The two FETs were designed to be used in a half-bridge configuration for synchronous buck and other power supply applications. Additionally, these NexFET power MOSFETs can be used for adaptor, USB input protection, and battery charging applications. The dual FETs feature low drain-to-source on-resistance that minimizes losses and offers low component count for space-constrained applications. The CSD87502Q2 is a 30 V, 27 mΩ N-Channel device with dual independent MOSFETs in a SON 2 x 2 mm plastic package. The two FETs were designed to be used in a half-bridge configuration for synchronous buck and other power supply applications. Additionally, these NexFET power MOSFETs can be used for adaptor, USB input protection, and battery charging applications. The dual FETs feature low drain-to-source on-resistance that minimizes losses and offers low component count for space-constrained applications.