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STGWA15H120DF2
Discrete Semiconductor Products

STGWA15H120DF2

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STMicroelectronics

TRENCH GATE FIELD-STOP IGBT, H SERIES 1200 V, 15 A HIGH SPEED

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STGWA15H120DF2
Discrete Semiconductor Products

STGWA15H120DF2

Active
STMicroelectronics

TRENCH GATE FIELD-STOP IGBT, H SERIES 1200 V, 15 A HIGH SPEED

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTGWA15H120DF2
Current - Collector (Ic) (Max) [Max]30 A
Current - Collector Pulsed (Icm)60 A
Gate Charge67 nC
IGBT TypeTrench Field Stop
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power - Max [Max]259 W
Reverse Recovery Time (trr)231 ns
Supplier Device PackageTO-247-3
Switching Energy370 µJ, 380 µJ
Test Condition600 V, 10 Ohm, 15 A, 15 V
Vce(on) (Max) @ Vge, Ic2.6 V
Voltage - Collector Emitter Breakdown (Max) [Max]1200 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 597$ 4.61

Description

General part information

STGWA15H120DF2 Series

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high-switching frequency converters. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.