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Technical Specifications
Parameters and characteristics for this part
| Specification | STF20NM60D |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 20 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1300 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -65 °C |
| Package / Case | TO-220-3 Full Pack |
| Power Dissipation (Max) | 45 W |
| Rds On (Max) @ Id, Vgs | 290 mOhm |
| Supplier Device Package | TO-220FP |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
STF20 Series
N-channel 600 V, 0.230 Ohm typ., 13 A MDmesh M2 EP Power MOSFET in a TO-220FP package
| Part | Mounting Type | FET Type | Operating Temperature [Max] | Operating Temperature [Min] | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Technology | Package / Case | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Rds On (Max) @ Id, Vgs | Supplier Device Package | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | Through Hole | N-Channel | 150 °C | -65 °C | 600 V | 10 V | 30 V | 20 A | MOSFET (Metal Oxide) | TO-220-3 Full Pack | 45 W | 1300 pF | 290 mOhm | TO-220FP | 5 V | ||||
STMicroelectronics | Through Hole | N-Channel | 175 °C | -55 °C | 60 V | 10 V | 20 V | 20 A | MOSFET (Metal Oxide) | TO-220-3 Full Pack | 28 W | 400 pF | 70 mOhm | TO-220FP | 4 V | 18 nC | |||
 STMicroelectronics | Through Hole | N-Channel | 600 V | 10 V | 25 V | 13 A | MOSFET (Metal Oxide) | TO-220-3 Full Pack | TO-220FP | 4.75 V | 22 nC | 150 °C | |||||||
 STMicroelectronics | Through Hole | N-Channel | 150 °C | -55 °C | 950 V | 10 V | 30 V | 18 A | MOSFET (Metal Oxide) | TO-220-3 Full Pack | 28 W | 330 mOhm | TO-220FP | 5 V | 50.7 nC | 1600 pF | |||
 STMicroelectronics | Through Hole | N-Channel | 150 °C | -55 °C | 950 V | 10 V | 30 V | 17.5 A | MOSFET (Metal Oxide) | TO-220-3 Full Pack | 40 W | 330 mOhm | TO-220FP | 5 V | 40 nC | 1500 pF | |||
STMicroelectronics | Through Hole | N-Channel | 500 V | 10 V | 30 V | 17 A | MOSFET (Metal Oxide) | TO-220-3 Full Pack | 40 W | 2600 pF | 270 mOhm | TO-220FP | 4.5 V | 119 nC | 150 °C | ||||
 STMicroelectronics | Through Hole | N-Channel | 650 V | 10 V | 25 V | 15 A | MOSFET (Metal Oxide) | TO-220-3 Full Pack | 270 mOhm | TO-220FP | 4 V | 150 °C | 1280 pF | 44 nC |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 2.05 | |
Description
General part information
STF20 Series
This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters.
Documents
Technical documentation and resources