Specification	FDP032N08B-F102

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	144 nC
Input Capacitance (Ciss) (Max) @ Vds	10965 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	263 W
Rds On (Max) @ Id, Vgs [Max]	3.3 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

FDP032N08B Series

N-Channel PowerTrench® MOSFET 80V, 211A, 3.3mΩ

Part	FET Type	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Package / Case	Power Dissipation (Max) [Max]	Mounting Type
ON Semiconductor FDP032N08B-F102	N-Channel	4.5 V	3.3 mOhm	-55 °C	175 ░C	10 V	10965 pF	144 nC	20 V	MOSFET (Metal Oxide)	80 V	120 A	TO-220-3	TO-220-3	263 W	Through Hole

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 2.72
		10	$ 1.78
		100	$ 1.28
Newark	Each	500	$ 1.96
		500	$ 1.96
		1000	$ 1.76
		1000	$ 1.76
		2500	$ 1.42
		2500	$ 1.42
		5000	$ 1.38
		5000	$ 1.38
ON Semiconductor	N/A	1	$ 1.22

Description

General part information

FDP032N08B Series

This N-Channel MOSFET is produced using an advanced PowerTrench®process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Documents

Technical documentation and resources

Package Drawing-221A-TO-220-3 10.10x15.12x4.45, 2.54P

Package Drawing