FDP032N08B Series

N-Channel PowerTrench® MOSFET 80V, 211A, 3.3mΩ

Catalog

N-Channel PowerTrench® MOSFET 80V, 211A, 3.3mΩ

Part	FET Type	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Package / Case	Power Dissipation (Max) [Max]	Mounting Type
ON Semiconductor FDP032N08B-F102	N-Channel	4.5 V	3.3 mOhm	-55 °C	175 ░C	10 V	10965 pF	144 nC	20 V	MOSFET (Metal Oxide)	80 V	120 A	TO-220-3	TO-220-3	263 W	Through Hole

Catalog

N-Channel PowerTrench® MOSFET 80V, 211A, 3.3mΩ

Key Features

• RDS(on)= 2.85mΩ (Typ.)@ VGS= 10V, ID= 50A

• Low FOM RDS(on)*QG

• Low Reverse Recovery Charge, Qrr= 102 nC

• Soft Reverse Recovery Body Diode

• Enables High Efficiency in Synchronous Rectification

• Fast Switching Speed

• 100% UIL Tested

• RoHS Compliant

Description

This N-Channel MOSFET is produced using an advanced PowerTrench®process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.