GAN041-650WSBQ
ActiveGALLIUM NITRIDE (GAN) TRANSISTOR, 650 V, 47.2 A, 41 MILLIOHMS, 22 NC, TO-247, 3 PINS, SURFACE MOUNT
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GAN041-650WSBQ
ActiveGALLIUM NITRIDE (GAN) TRANSISTOR, 650 V, 47.2 A, 41 MILLIOHMS, 22 NC, TO-247, 3 PINS, SURFACE MOUNT
Technical Specifications
Parameters and characteristics for this part
| Specification | GAN041-650WSBQ |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 47.2 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 22 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1500 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 187 W |
| Rds On (Max) @ Id, Vgs | 41 mOhm |
| Supplier Device Package | TO-247-3 |
| Technology | GaNFET (Cascode Gallium Nitride FET) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
GAN041-650WSB Series
The GAN041-650WSB is a 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance.
Documents
Technical documentation and resources