M93C56-RMN3TP/K
ActiveEEPROM SERIAL-MICROWIRE 2K-BIT 256 X 8/128 X 16 2.5V/3.3V/5V 8-PIN SOIC T/R
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M93C56-RMN3TP/K
ActiveEEPROM SERIAL-MICROWIRE 2K-BIT 256 X 8/128 X 16 2.5V/3.3V/5V 8-PIN SOIC T/R
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Technical Specifications
Parameters and characteristics for this part
| Specification | M93C56-RMN3TP/K |
|---|---|
| Clock Frequency | 2 MHz |
| Grade | Automotive |
| Memory Format | EEPROM |
| Memory Interface | Microwire |
| Memory Organization [custom] | 8, 16 |
| Memory Organization [custom] | 128, 256 |
| Memory Size | 256 B |
| Memory Type | Non-Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 125 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 0.154 in |
| Package / Case | 8-SOIC |
| Package / Case | 3.9 mm |
| Qualification | AEC-Q100 |
| Supplier Device Package | 8-SOIC |
| Technology | EEPROM |
| Voltage - Supply [Max] | 5.5 V |
| Voltage - Supply [Min] | 1.8 V |
| Write Cycle Time - Word, Page [custom] | 5 ms |
| Write Cycle Time - Word, Page [custom] | 5 ms |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
M93C56-A125 Series
The M93C46 (1 Kbit), M93C56 (2 Kbit), M93C66 (4 Kbit), M93C76 (8 Kbit) and M93C86 (16 Kbit) are Electrically Erasable PROgrammable Memory (EEPROM) devices accessed through the MICROWIRE™ bus protocol. The memory array can be configured either in bytes (x8b) or in words (x16b).
The M93Cx6-A125 devices operate within a voltage supply range from 1.8 V to 5.5 V
The M93Cx6-A125 devices are guaranteed over the -40 °C/+125 °C temperature range and are compliant with the Automotive standard AEC-Q100 Grade 1.