Discrete Semiconductor Products
STW3N170
ActiveSTMicroelectronics
N-CHANNEL 1700 V, 7 OHM TYP., 2.6 A, POWERMESH POWER MOSFET IN TO-247 PACKAGE
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Discrete Semiconductor Products
STW3N170
ActiveSTMicroelectronics
N-CHANNEL 1700 V, 7 OHM TYP., 2.6 A, POWERMESH POWER MOSFET IN TO-247 PACKAGE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | STW3N170 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2.6 A |
| Drain to Source Voltage (Vdss) | 1700 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1100 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Rds On (Max) @ Id, Vgs [Max] | 13 Ohm |
| Supplier Device Package | TO-247-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STW3N170 Series
This Power MOSFET is designed using the STMicroelectronics consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.
Documents
Technical documentation and resources