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TO-18
Discrete Semiconductor Products

2N708

Active
Microchip Technology

SMALL-SIGNAL BJT TO-18 ROHS COMPLIANT: YES

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Search across all available documentation for this part.

TO-18
Discrete Semiconductor Products

2N708

Active
Microchip Technology

SMALL-SIGNAL BJT TO-18 ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification2N708
Current - Collector Cutoff (Max) [Max]25 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]30
Mounting TypeThrough Hole
Operating Temperature [Max]200 °C
Operating Temperature [Min]-65 °C
Package / CaseTO-18-3 Metal Can, TO-206AA
Power - Max [Max]360 mW
Supplier Device PackageTO-18
Supplier Device PackageTO-206AA
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic400 mV
Voltage - Collector Emitter Breakdown (Max)15 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 86.93
Microchip DirectN/A 1$ 93.62
NewarkEach 100$ 86.93
500$ 83.59

Description

General part information

2N708-Transistor Series

This specification covers the performance requirements for NPN silicon switching 2N708 transistors. Two levels of product assurance (JAN and JANTX) are provided for the device type as specified in MIL-PRF-19500/312. One level of product assurance (JANHC) is provided for unencapsulated device type (die) as specified in MIL-PRF-19500/312. The device package styles are as follows: Three terminal metal-can package TO-206AA (formerly TO-18) and unencapsulated die for device type JANHC.

Documents

Technical documentation and resources