Discrete Semiconductor Products

SIHD6N80E-GE3

Active

MOSFET N-CH 800V 5.4A DPAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET N-CH 800V 5.4A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIHD6N80E-GE3

Current - Continuous Drain (Id) @ 25°C	5.4 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	44 nC
Input Capacitance (Ciss) (Max) @ Vds	827 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	78 W
Rds On (Max) @ Id, Vgs	940 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	FET Type	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package	Power Dissipation (Max)	Technology	Package / Case	Vgs (Max)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs
Vishay General Semiconductor - Diodes Division SIHD6N65ET5-GE3	N-Channel	Surface Mount	48 nC	-55 °C	150 °C	650 V	TO-252AA	78 W	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	30 V	600 mOhm	820 pF	10 V	7 A	4 V
Vishay General Semiconductor - Diodes Division SIHD6N65ET4-GE3	N-Channel	Surface Mount	48 nC	-55 °C	150 °C	650 V	TO-252AA	78 W	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	30 V	600 mOhm	820 pF	10 V	7 A	4 V
Vishay General Semiconductor - Diodes Division SIHD6N65ET1-GE3	N-Channel	Surface Mount	48 nC	-55 °C	150 °C	650 V	TO-252AA	78 W	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	30 V	600 mOhm	820 pF	10 V	7 A	4 V
Vishay General Semiconductor - Diodes Division SIHD6N80E-GE3	N-Channel	Surface Mount	44 nC	-55 °C	150 °C	800 V	TO-252AA	78 W	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	30 V	940 mOhm	827 pF	10 V	5.4 A	4 V
Vishay General Semiconductor - Diodes Division SIHD6N80AE-GE3	N-Channel	Surface Mount		-55 °C	150 °C	800 V	TO-252AA		MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	30 V	950 mOhm	422 pF	10 V	5 A	4 V	62.5 W	22.5 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 800 V 5.4A (Tc) 78W (Tc) Surface Mount TO-252AA

Technical documentation and resources