SIHD6 Series

Catalog

MOSFET N-CH 650V 7A TO252AA

Part	FET Type	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package	Power Dissipation (Max)	Technology	Package / Case	Vgs (Max)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs
Vishay General Semiconductor - Diodes Division SIHD6N65ET5-GE3	N-Channel	Surface Mount	48 nC	-55 °C	150 °C	650 V	TO-252AA	78 W	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	30 V	600 mOhm	820 pF	10 V	7 A	4 V
Vishay General Semiconductor - Diodes Division SIHD6N65ET4-GE3	N-Channel	Surface Mount	48 nC	-55 °C	150 °C	650 V	TO-252AA	78 W	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	30 V	600 mOhm	820 pF	10 V	7 A	4 V
Vishay General Semiconductor - Diodes Division SIHD6N65ET1-GE3	N-Channel	Surface Mount	48 nC	-55 °C	150 °C	650 V	TO-252AA	78 W	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	30 V	600 mOhm	820 pF	10 V	7 A	4 V
Vishay General Semiconductor - Diodes Division SIHD6N80E-GE3	N-Channel	Surface Mount	44 nC	-55 °C	150 °C	800 V	TO-252AA	78 W	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	30 V	940 mOhm	827 pF	10 V	5.4 A	4 V
Vishay General Semiconductor - Diodes Division SIHD6N80AE-GE3	N-Channel	Surface Mount		-55 °C	150 °C	800 V	TO-252AA		MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	30 V	950 mOhm	422 pF	10 V	5 A	4 V	62.5 W	22.5 nC