Discrete Semiconductor Products

PMV50XP215

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P-CHANNEL MOSFET

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Discrete Semiconductor Products

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P-CHANNEL MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	PMV50XP215

Current - Continuous Drain (Id) @ 25°C	3.6 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	744 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	4.63 W, 490 mW
Rds On (Max) @ Id, Vgs	60 mOhm
Supplier Device Package	TO-236AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	900 mV

Part	Vgs(th) (Max) @ Id	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Supplier Device Package	Technology	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Package / Case	Mounting Type
Freescale Semiconductor - NXP PMV50XP215	900 mV	P-Channel	744 pF	4.63 W 490 mW	TO-236AB	MOSFET (Metal Oxide)	1.5 V 4.5 V	3.6 A	20 V	-55 °C	150 °C	60 mOhm	12 nC	12 V	SC-59 SOT-23-3 TO-236-3	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 20 V 3.6A (Ta) 490mW (Ta), 4.63W (Tc) Surface Mount TO-236AB

Technical documentation and resources