Discrete Semiconductor Products

SIR178DP-T1-RE3

Active

MOSFET N-CH 20V 100A/430A PPAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET N-CH 20V 100A/430A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIR178DP-T1-RE3

Current - Continuous Drain (Id) @ 25°C	430 A, 100 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	310 nC
Input Capacitance (Ciss) (Max) @ Vds	12430 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	6.3 W, 104 W
Rds On (Max) @ Id, Vgs	0.4 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	12 V
Vgs (Max) [Min]	-8 V
Vgs(th) (Max) @ Id	1.5 V

Part	Package / Case	Supplier Device Package	Technology	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs (Max) [Max]	Vgs (Max) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds
Vishay General Semiconductor - Diodes Division SIR178DP-T1-RE3	PowerPAK® SO-8	PowerPAK® SO-8	MOSFET (Metal Oxide)	6.3 W 104 W	310 nC	-55 °C	150 °C	Surface Mount	1.5 V	20 V	0.4 mOhm	12 V	-8 V	10 V	2.5 V	N-Channel	100 A 430 A	12430 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 20 V 100A (Ta), 430A (Tc) 6.3W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources