SIR178 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 20V 100A/430A PPAK
| Part | Package / Case | Supplier Device Package | Technology | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Vgs (Max) [Max] | Vgs (Max) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | FET Type | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | PowerPAK® SO-8 | PowerPAK® SO-8 | MOSFET (Metal Oxide) | 6.3 W 104 W | 310 nC | -55 °C | 150 °C | Surface Mount | 1.5 V | 20 V | 0.4 mOhm | 12 V | -8 V | 10 V | 2.5 V | N-Channel | 100 A 430 A | 12430 pF |