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PowerPAK SO-8
Discrete Semiconductor Products

SI7190ADP-T1-RE3

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Vishay General Semiconductor - Diodes Division

MOSFET N-CH 250V 4.3A/14.4A PPAK

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PowerPAK SO-8
Discrete Semiconductor Products

SI7190ADP-T1-RE3

Active
Vishay General Semiconductor - Diodes Division

MOSFET N-CH 250V 4.3A/14.4A PPAK

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSI7190ADP-T1-RE3
Current - Continuous Drain (Id) @ 25°C14.4 A, 4.3 A
Drain to Source Voltage (Vdss)250 V
Drive Voltage (Max Rds On, Min Rds On) [Max]7.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs22.4 nC
Input Capacitance (Ciss) (Max) @ Vds860 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CasePowerPAK® SO-8
Power Dissipation (Max)56.8 W, 5 W
Rds On (Max) @ Id, Vgs102 mOhm
Supplier Device PackagePowerPAK® SO-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.81
10$ 1.50
100$ 1.20
500$ 1.01
1000$ 0.86
Digi-Reel® 1$ 1.81
10$ 1.50
100$ 1.20
500$ 1.01
1000$ 0.86
Tape & Reel (TR) 3000$ 0.82
6000$ 0.79
9000$ 0.76

Description

General part information

SI7190 Series

N-Channel 250 V 4.3A (Ta), 14.4A (Tc) 5W (Ta), 56.8W (Tc) Surface Mount PowerPAK® SO-8

Documents

Technical documentation and resources