SI7190 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 250V 4.3A/14.4A PPAK
| Part | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Technology | FET Type | Supplier Device Package | Package / Case | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 860 pF | 5 W 56.8 W | 4.3 A 14.4 A | 4 V | 102 mOhm | 250 V | 10 V | 7.5 V | MOSFET (Metal Oxide) | N-Channel | PowerPAK® SO-8 | PowerPAK® SO-8 | 20 V | -55 °C | 150 °C | Surface Mount | 22.4 nC | ||
Vishay General Semiconductor - Diodes Division | 2214 pF | 5.4 W 96 W | 18.4 A | 4 V | 250 V | MOSFET (Metal Oxide) | N-Channel | PowerPAK® SO-8 | PowerPAK® SO-8 | 20 V | -55 °C | 150 °C | Surface Mount | 72 nC | 6 V 10 V | 118 mOhm |