Discrete Semiconductor Products

JAN2N6299

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80V PNP POWER BJT THT TO-66 ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Active

80V PNP POWER BJT THT TO-66 ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	JAN2N6299

Current - Collector (Ic) (Max) [Max]	8 A
Current - Collector Cutoff (Max) [Max]	500 çA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	750
Grade	Military
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-65 °C
Package / Case	TO-66-2, TO-213AA
Power - Max [Max]	64 W
Qualification	MIL-PRF-19500/540
Transistor Type	PNP - Darlington
Vce Saturation (Max) @ Ib, Ic	2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Qualification	Package / Case	Transistor Type	Grade	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]
Microchip Technology JAN2N6299	80 V	64 W	2 V	Through Hole	MIL-PRF-19500/540	TO-213AA TO-66-2	PNP - Darlington	Military	750	500 çA	8 A	175 ░C	-65 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	100	$ 29.22
Newark	Each	100	$ 29.22
		500	$ 28.10

General part information

Bipolar (BJT) Transistor PNP - Darlington 80 V 8 A 64 W Through Hole

Technical documentation and resources