Discrete Semiconductor Products
STGF20H60DF
ActiveSTMicroelectronics
TRANS IGBT CHIP N-CH 600V 40A 37W 3-PIN(3+TAB) TO-220FP TUBE
Discrete Semiconductor Products
STGF20H60DF
ActiveSTMicroelectronics
TRANS IGBT CHIP N-CH 600V 40A 37W 3-PIN(3+TAB) TO-220FP TUBE
Technical Specifications
Parameters and characteristics for this part
| Specification | STGF20H60DF |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 40 A |
| Current - Collector Pulsed (Icm) | 80 A |
| Gate Charge | 115 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 Full Pack |
| Reverse Recovery Time (trr) | 90 ns |
| Supplier Device Package | TO-220FP |
| Switching Energy | 261 µJ, 209 µJ |
| Td (on/off) @ 25°C [custom] | 42.5 ns |
| Td (on/off) @ 25°C [custom] | 177 ns |
| Test Condition | 20 A, 10 Ohm, 400 V, 15 V |
| Vce(on) (Max) @ Vge, Ic [Max] | 2 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 600 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STGF20H60DF Series
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(sat)temperature coefficient and very tight parameter distribution result in easier paralleling operation.