Specification	FDG6308P

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	600 mA
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Input Capacitance (Ciss) (Max) @ Vds	153 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max [Max]	300 mW
Rds On (Max) @ Id, Vgs	400 mOhm
Supplier Device Package	SC-88 (SC-70-6)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

FDG6308P Series

Dual P-Channel 1.8V Specified PowerTrench® MOSFET -20 V, -0.6 A, 400 mΩ

Part	Package / Case	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Technology	Mounting Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Power - Max [Max]	FET Feature	Configuration	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id
ON Semiconductor FDG6308P	6-TSSOP SC-88 SOT-363	600 mA	153 pF	MOSFET (Metal Oxide)	Surface Mount	SC-88 (SC-70-6)	20 V	400 mOhm	300 mW	Logic Level Gate	2 P-Channel	-55 °C	150 °C	1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

TME	N/A	3	$ 0.29
		25	$ 0.26
		100	$ 0.23
		500	$ 0.21

Description

General part information

FDG6308P Series

This P-Channel 1.8V specified MOSFET uses an advanced low voltage PowerTrench process. It has been optimized for battery power management applications.