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8-Power TDFN
Discrete Semiconductor Products

CSD17552Q3A

Active
Texas Instruments

30-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 3 MM X 3 MM, 6 MOHM

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8-Power TDFN
Discrete Semiconductor Products

CSD17552Q3A

Active
Texas Instruments

30-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 3 MM X 3 MM, 6 MOHM

Technical Specifications

Parameters and characteristics for this part

SpecificationCSD17552Q3A
Current - Continuous Drain (Id) @ 25°C60 A, 15 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]12 nC
Input Capacitance (Ciss) (Max) @ Vds2050 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)2.6 W
Rds On (Max) @ Id, Vgs6 mOhm
Supplier Device Package8-VSONP (3x3.3)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id1.9 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.93
10$ 0.76
100$ 0.59
500$ 0.50
1000$ 0.41
Digi-Reel® 1$ 0.93
10$ 0.76
100$ 0.59
500$ 0.50
1000$ 0.41
Tape & Reel (TR) 2500$ 0.38
5000$ 0.37
12500$ 0.35
25000$ 0.35
Texas InstrumentsLARGE T&R 1$ 0.69
100$ 0.53
250$ 0.39
1000$ 0.28

Description

General part information

CSD17552Q3A Series

This 30 V, 5.5 mΩ, 3.3 mm × 3.3 mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

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