CSD17552Q3A Series

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 6.2 mOhm

Catalog

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 6.2 mOhm

Part	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Technology	Mounting Type	Supplier Device Package	Vgs (Max)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)
Texas Instruments CSD17552Q5A	-55 °C	150 °C	30 V	N-Channel	4.5 V 10 V	12 nC	1.9 V	2050 pF	MOSFET (Metal Oxide)	Surface Mount	8-VSONP (5x6)	20 V	6.2 mOhm	3 W	8-PowerTDFN	17 A 60 A
Texas Instruments CSD17552Q3A	-55 °C	150 °C	30 V	N-Channel	4.5 V 10 V	12 nC	1.9 V	2050 pF	MOSFET (Metal Oxide)	Surface Mount	8-VSONP (3x3.3)	20 V	6 mOhm		8-PowerVDFN	15 A 60 A	2.6 W

Catalog

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 6.2 mOhm

Key Features

• Ultra Low Qg and QgdLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 5-mm × 6-mm Plastic PackageUltra Low Qg and QgdLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 5-mm × 6-mm Plastic Package

Description

This 30 V, 5.5 mΩ, 3.3 mm × 3.3 mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications. SPACE SPACE SPACE This 30 V, 5.5 mΩ, 3.3 mm × 3.3 mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications. SPACE SPACE SPACE