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TO-92 / 3
Discrete Semiconductor Products

TP0606N3-G-P002

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Microchip Technology

MOSFET, P-CHANNEL ENHANCEMENT-MODE, -40V, 2.0 OHM

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TO-92 / 3
Discrete Semiconductor Products

TP0606N3-G-P002

Active
Microchip Technology

MOSFET, P-CHANNEL ENHANCEMENT-MODE, -40V, 2.0 OHM

Technical Specifications

Parameters and characteristics for this part

SpecificationTP0606N3-G-P002
Current - Continuous Drain (Id) @ 25°C320 mA
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]5 V
FET TypeP-Channel
Input Capacitance (Ciss) (Max) @ Vds150 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-226-3, TO-92-3
Power Dissipation (Max)1 W
Rds On (Max) @ Id, Vgs3.5 Ohm
Supplier Device PackageTO-92-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 2000$ 0.91
Microchip DirectRVT/R 1$ 1.22
25$ 1.01
100$ 0.91
1000$ 0.77
5000$ 0.71
10000$ 0.65

Description

General part information

TP0604 Series

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.

Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.