Discrete Semiconductor Products

SQV120N10-3M8_GE3

Obsolete

MOSFET N-CH 100V 120A TO262-3

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 120A TO262-3

Technical Specifications

Parameters and characteristics for this part

Specification	SQV120N10-3M8_GE3

Current - Continuous Drain (Id) (Tc)	120 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	190 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	7230 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-262AA, I2PAK, TO-262-3 Long Leads
Package Name	TO-262-3
Power Dissipation (Max)	250 W
Qualification	AEC-Q101
Rds On (Max)	3.8 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3.5 V

Part	Package Name	Grade	FET Type	Vgs (Max)	Power Dissipation (Max)	Vgs(th) (Max)	Mounting Type	Current - Continuous Drain (Id) (Tc)	Qualification	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Package / Case	Technology	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Rds On (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)	Drive Voltage (Max Rds On, Min Rds On)
Vishay Dale SQV120N06-4M7L_GE3	TO-262-3	Automotive	N-Channel	20 V	250 W	2.5 V	Through Hole	120 A	AEC-Q101	230 nC	-55 °C	175 °C	I2PAK TO-262-3 Long Leads TO-262AA	MOSFET (Metal Oxide)	10 V	4.5 V	4.7 mOhm	60 V	8800 pF
Vishay Dale SQV120N10-3M8_GE3	TO-262-3	Automotive	N-Channel	20 V	250 W	3.5 V	Through Hole	120 A	AEC-Q101	190 nC	-55 °C	175 °C	I2PAK TO-262-3 Long Leads TO-262AA	MOSFET (Metal Oxide)			3.8 mOhm	100 V	7230 pF	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 100 V 120A (Tc) 250W (Tc) Through Hole TO-262-3

Technical documentation and resources