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D²PAK
Discrete Semiconductor Products

STB160N75F3

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STMicroelectronics

N-CHANNEL 75 V, 3.2 MOHM TYP., 120 A STRIPFET F3 POWER MOSFET IN D2PAK PACKAGE

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DocumentsDatasheet+13
D²PAK
Discrete Semiconductor Products

STB160N75F3

Active
STMicroelectronics

N-CHANNEL 75 V, 3.2 MOHM TYP., 120 A STRIPFET F3 POWER MOSFET IN D2PAK PACKAGE

Deep-Dive with AI

DocumentsDatasheet+13

Technical Specifications

Parameters and characteristics for this part

SpecificationSTB160N75F3
Current - Continuous Drain (Id) @ 25°C120 A
Drain to Source Voltage (Vdss)75 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]85 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]6750 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)330 W
Rds On (Max) @ Id, Vgs4 mOhm
Supplier Device PackageD2PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 4.90
10$ 4.11
100$ 3.33
500$ 2.96
Digi-Reel® 1$ 4.90
10$ 4.11
100$ 3.33
500$ 2.96
N/A 697$ 5.05
Tape & Reel (TR) 1000$ 2.53
2000$ 2.38

Description

General part information

STB160 Series

This N-channel enhancement mode Power MOSFET is the latest refinement of ST’s STripFET process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and low gate charge.Ultra low on-resistance100% Avalanche tested