Discrete Semiconductor Products

SISH402DN-T1-GE3

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MOSFET N-CH 30V 19A/35A PPAK

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Discrete Semiconductor Products

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MOSFET N-CH 30V 19A/35A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SISH402DN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	19 A, 35 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	42 nC
Input Capacitance (Ciss) (Max) @ Vds	1700 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8SH
Power Dissipation (Max)	52 W, 3.8 W
Rds On (Max) @ Id, Vgs	6 mOhm
Supplier Device Package	PowerPAK® 1212-8SH
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.2 V

Part	Technology	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Package / Case	Supplier Device Package	FET Type	Power Dissipation (Max)
Vishay General Semiconductor - Diodes Division SISH402DN-T1-GE3	MOSFET (Metal Oxide)	19 A 35 A	30 V	42 nC	2.2 V	Surface Mount	6 mOhm	1700 pF	4.5 V 10 V	-55 °C	150 °C	20 V	PowerPAK® 1212-8SH	PowerPAK® 1212-8SH	N-Channel	3.8 W 52 W

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General part information

N-Channel 30 V 19A (Ta), 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH

Technical documentation and resources