SISH402 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 30V 19A/35A PPAK
| Part | Technology | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id [Max] | Mounting Type | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Package / Case | Supplier Device Package | FET Type | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | 19 A 35 A | 30 V | 42 nC | 2.2 V | Surface Mount | 6 mOhm | 1700 pF | 4.5 V 10 V | -55 °C | 150 °C | 20 V | PowerPAK® 1212-8SH | PowerPAK® 1212-8SH | N-Channel | 3.8 W 52 W |