Discrete Semiconductor Products

F417MR12W1M1HB76BPSA1

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THE F4-17MR12W1M1H_B76 IS A COOLSIC™ MOSFET FOURPACK MODULE 1200 V, 17MΩ

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Discrete Semiconductor Products

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THE F4-17MR12W1M1H_B76 IS A COOLSIC™ MOSFET FOURPACK MODULE 1200 V, 17MΩ

Technical Specifications

Parameters and characteristics for this part

Specification	F417MR12W1M1HB76BPSA1

Configuration	4 N-Channel
Current - Continuous Drain (Id) @ 25°C	45 A
Drain to Source Voltage (Vdss)	1.2 kV
Drain to Source Voltage (Vdss)	1200 V
Gate Charge (Qg) (Max) @ Vgs	200 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	6050 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 °C
Package / Case	Module
Rds On (Max) @ Id, Vgs	11.7 mOhm
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id	5.15 V

Part	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Configuration	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Technology	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]
INFINEON F417MR12W1M1HB76BPSA1	5.15 V	1.2 kV	1200 V	200 nC	Module	45 A	175 °C	-40 °C	4 N-Channel	6050 pF	Chassis Mount	Silicon Carbide (SiC)	11.7 mOhm
INFINEON F417MR12W1M1HPB76BPSA1	5.15 V	1.2 kV	1200 V		Module	45 A	175 °C	-40 °C	4 N-Channel		Chassis Mount	Silicon Carbide (SiC)	16.2 mOhm	4400 pF	149 nC

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General part information

EasyPACK™ 1BCoolSiC™ MOSFETfourpack module 1200 V, 17 mΩ G1 with NTC andPressFITcontact technology.

Technical documentation and resources