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NGD4300GCJ
Integrated Circuits (ICs)

NGD4300GCJ

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Nexperia USA Inc.

4 A PEAK HIGH-PERFORMANCE DUAL MOSFET GATE DRIVER

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NGD4300GCJ
Integrated Circuits (ICs)

NGD4300GCJ

Active
Nexperia USA Inc.

4 A PEAK HIGH-PERFORMANCE DUAL MOSFET GATE DRIVER

Technical Specifications

Parameters and characteristics for this part

SpecificationNGD4300GCJ
Channel TypeIndependent
Current - Peak Output (Source, Sink) [custom]4 A
Current - Peak Output (Source, Sink) [custom]4 A
Driven ConfigurationHalf-Bridge
Gate TypeMOSFET (N-Channel)
Input TypeNon-Inverting
Mounting TypeSurface Mount
Number of Drivers2
Operating Temperature [Max]125 °C
Operating Temperature [Min]-40 °C
Package / Case8-WDFN Exposed Pad
Rise / Fall Time (Typ) [custom]3.5 ns
Rise / Fall Time (Typ) [custom]4 ns
Supplier Device Package8-WSON (4x4)
Voltage - Supply [Max]17 V
Voltage - Supply [Min]8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 250$ 1.57

Description

General part information

NGD4300GC Series

The NGD4300 is a high-performance gate driver designed to drive both high-side and low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver can work with rail voltages up to 120 V and uses a bootstrap supply with an integrated diode. Both low-side and high-side output drivers have an independent undervoltage lockout (UVLO) circuit which disables the output driver when the driver supply is below its threshold level. The NGD4300 accepts input control signals complying with both TTL and CMOS signaling as low as 2.5 V (±10%). The low voltage, provided by an internal voltage regulator, is used to supply circuitry in signal paths controlling the low-side and high-side power switches. This enables a low-power operation and a better controlled driver performance irrespective of the IC supply voltage.