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TO-236AB
Discrete Semiconductor Products

PMV100EPAR

Active
Freescale Semiconductor - NXP

PMV100EPA - 60 V, P-CHANNEL TRENCH MOSFET@EN-US TO-236 3-PIN

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TO-236AB
Discrete Semiconductor Products

PMV100EPAR

Active
Freescale Semiconductor - NXP

PMV100EPA - 60 V, P-CHANNEL TRENCH MOSFET@EN-US TO-236 3-PIN

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationPMV100EPAR
Current - Continuous Drain (Id) @ 25°C2.2 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs17 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds616 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)8.3 W, 710 mW
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs130 mOhm
Supplier Device PackageTO-236AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.48
10$ 0.37
100$ 0.22
500$ 0.21
1000$ 0.14
Digi-Reel® 1$ 0.48
10$ 0.37
100$ 0.22
500$ 0.21
1000$ 0.14
Tape & Reel (TR) 3000$ 0.13
6000$ 0.12
9000$ 0.11
30000$ 0.11
75000$ 0.11

Description

General part information

PMV100 Series

P-Channel 60 V 2.2A (Ta) 710mW (Ta), 8.3W (Tc) Surface Mount TO-236AB

Documents

Technical documentation and resources