PMV100 Series

Catalog

PMV100EPA - 60 V, P-CHANNEL TRENCH MOSFET@EN-US TO-236 3-PIN

Part	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Technology	Vgs(th) (Max) @ Id	Qualification	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Grade	FET Type	Current - Continuous Drain (Id) @ 25°C	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)
Freescale Semiconductor - NXP PMV100EPAR	60 V	8.3 W 710 mW	Surface Mount	4.5 V 10 V	TO-236AB	130 mOhm	-55 °C	175 ░C	17 nC	MOSFET (Metal Oxide)	3.2 V	AEC-Q101	616 pF	20 V	Automotive	P-Channel	2.2 A	SC-59 SOT-23-3 TO-236-3
Freescale Semiconductor - NXP PMV100XPEAR	20 V	1.9 W 463 mW	Surface Mount	2.5 V 4.5 V	TO-236AB	128 mOhm	-55 °C	150 °C		MOSFET (Metal Oxide)	1.25 V	AEC-Q101	386 pF	12 V	Automotive	P-Channel	2.4 A	SC-59 SOT-23-3 TO-236-3	6 nC
Freescale Semiconductor - NXP PMV100ENEAR	30 V	460 mW	Surface Mount	4.5 V 10 V	TO-236AB	72 mOhm	-55 °C	150 °C		MOSFET (Metal Oxide)	2.5 V	AEC-Q101	160 pF	20 V	Automotive	N-Channel	3 A	SC-59 SOT-23-3 TO-236-3	5.5 nC	4.5 W