Specification	BUK4D110-20PX

Current - Continuous Drain (Id) @ 25°C	6.7 A, 3.4 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	2.5 V, 8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	5 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	365 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UDFN Exposed Pad
Power Dissipation (Max)	7.5 W, 2 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	96 mOhm
Supplier Device Package	DFN2020MD-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.3 V

BUK4D110-20P Series

20 V, P-channel Trench MOSFET

Part	Qualification	Package / Case	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	FET Type	Drain to Source Voltage (Vdss)	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Grade	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C
Nexperia USA Inc. BUK4D110-20PX	AEC-Q101	6-UDFN Exposed Pad	1.3 V	2.5 V 8 V	365 pF	2 W 7.5 W	175 °C	-55 °C	Surface Mount	P-Channel	20 V	MOSFET (Metal Oxide)	5 nC	DFN2020MD-6	96 mOhm	Automotive	12 V	3.4 A 6.7 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.15

Description

General part information

BUK4D110-20P Series

P-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.