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20 V, P-channel Trench MOSFET
Description
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P-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, P-channel Trench MOSFET
20 V, P-channel Trench MOSFET
| Part | Qualification | Package / Case | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Operating Temperature [Max] | Operating Temperature [Min] | Mounting Type | FET Type | Drain to Source Voltage (Vdss) | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package | Rds On (Max) @ Id, Vgs | Grade | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | AEC-Q101 | 6-UDFN Exposed Pad | 1.3 V | 2.5 V 8 V | 365 pF | 2 W 7.5 W | 175 °C | -55 °C | Surface Mount | P-Channel | 20 V | MOSFET (Metal Oxide) | 5 nC | DFN2020MD-6 | 96 mOhm | Automotive | 12 V | 3.4 A 6.7 A |