Discrete Semiconductor Products

SI4931DY-T1-GE3

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MOSFET 2P-CH 12V 6.7A 8SOIC

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Discrete Semiconductor Products

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MOSFET 2P-CH 12V 6.7A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	SI4931DY-T1-GE3

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	6.7 A
Drain to Source Voltage (Vdss)	12 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	52 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	1.1 W
Rds On (Max) @ Id, Vgs [Max]	18 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Current - Continuous Drain (Id) @ 25°C	Configuration	Power - Max [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Package / Case [y]	Package / Case [x]	Supplier Device Package	FET Feature	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs [Max]	Technology
Vishay General Semiconductor - Diodes Division SI4931DY-T1-GE3	6.7 A	2 P-Channel	1.1 W	12 V	Surface Mount	52 nC	-55 °C	150 °C	8-SOIC	3.9 mm	0.154 in	8-SOIC	Logic Level Gate	1 V	18 mOhm	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division SI4931DY-T1-E3	6.7 A	2 P-Channel	1.1 W	12 V	Surface Mount	52 nC	-55 °C	150 °C	8-SOIC	3.9 mm	0.154 in	8-SOIC	Logic Level Gate	1 V	18 mOhm	MOSFET (Metal Oxide)

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General part information

Mosfet Array 12V 6.7A 1.1W Surface Mount 8-SOIC

Technical documentation and resources