SI4931 Series

Catalog

MOSFET 2P-CH 12V 6.7A 8SOIC

Part	Current - Continuous Drain (Id) @ 25°C	Configuration	Power - Max [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Package / Case [y]	Package / Case [x]	Supplier Device Package	FET Feature	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs [Max]	Technology
Vishay General Semiconductor - Diodes Division SI4931DY-T1-GE3	6.7 A	2 P-Channel	1.1 W	12 V	Surface Mount	52 nC	-55 °C	150 °C	8-SOIC	3.9 mm	0.154 in	8-SOIC	Logic Level Gate	1 V	18 mOhm	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division SI4931DY-T1-E3	6.7 A	2 P-Channel	1.1 W	12 V	Surface Mount	52 nC	-55 °C	150 °C	8-SOIC	3.9 mm	0.154 in	8-SOIC	Logic Level Gate	1 V	18 mOhm	MOSFET (Metal Oxide)