
Discrete Semiconductor Products
IRF9630
ObsoleteVishay General Semiconductor - Diodes Division
MOSFET P-CH 200V 6.5A TO220AB

Discrete Semiconductor Products
IRF9630
ObsoleteVishay General Semiconductor - Diodes Division
MOSFET P-CH 200V 6.5A TO220AB
Technical Specifications
Parameters and characteristics for this part
| Specification | IRF9630 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 6.5 A |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) [Max] | 74 W |
| Rds On (Max) @ Id, Vgs [Max] | 800 mOhm |
| Supplier Device Package | TO-220AB |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 211 | $ 1.42 | |
Description
General part information
IRF9630 Series
P-Channel 200 V 6.5A (Tc) 74W (Tc) Through Hole TO-220AB
Documents
Technical documentation and resources