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Discrete Semiconductor Products

IRF9630S

Obsolete

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Search across all available documentation for this part.

DocumentsDatasheet
Discrete Semiconductor Products

IRF9630S

Obsolete

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIRF9630S
Current - Continuous Drain (Id) @ 25°C6.5 A
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs29 nC
Input Capacitance (Ciss) (Max) @ Vds700 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)3 W, 74 W
Rds On (Max) @ Id, Vgs [Max]800 mOhm
Supplier Device PackageTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

IRF9630 Series

P-Channel 200 V 6.5A (Tc) 3W (Ta), 74W (Tc) Surface Mount TO-263 (D2PAK)

Documents

Technical documentation and resources