Discrete Semiconductor Products

SISS5808DN-T1-GE3

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N-CHANNEL 80 V (D-S) MOSFET POWE

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Discrete Semiconductor Products

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N-CHANNEL 80 V (D-S) MOSFET POWE

Technical Specifications

Parameters and characteristics for this part

Specification	SISS5808DN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	18.3 A, 66.6 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	7.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	24 nC
Input Capacitance (Ciss) (Max) @ Vds	1210 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8S
Power Dissipation (Max)	5 W, 65.7 W
Rds On (Max) @ Id, Vgs	119 mOhm
Supplier Device Package	PowerPAK® 1212-8S
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	FET Type	Package / Case	Vgs (Max)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Vgs(th) (Max) @ Id
Vishay General Semiconductor - Diodes Division SISS5808DN-T1-GE3	5 W 65.7 W	80 V	119 mOhm	10 V	7.5 V	18.3 A 66.6 A	Surface Mount	N-Channel	PowerPAK® 1212-8S	20 V	PowerPAK® 1212-8S	-55 °C	150 °C	1210 pF	24 nC	MOSFET (Metal Oxide)	4 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 80 V 18.3A (Ta), 66.6A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S

Technical documentation and resources