SISS5808 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
N-CHANNEL 80 V (D-S) MOSFET POWE
| Part | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Current - Continuous Drain (Id) @ 25°C | Mounting Type | FET Type | Package / Case | Vgs (Max) | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 5 W 65.7 W | 80 V | 119 mOhm | 10 V | 7.5 V | 18.3 A 66.6 A | Surface Mount | N-Channel | PowerPAK® 1212-8S | 20 V | PowerPAK® 1212-8S | -55 °C | 150 °C | 1210 pF | 24 nC | MOSFET (Metal Oxide) | 4 V |