Discrete Semiconductor Products

FS45MR12W1M1B11BOMA1

Obsolete

SIC 6N-CH 1200V AG-EASY1BM-2

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

SIC 6N-CH 1200V AG-EASY1BM-2

Technical Specifications

Parameters and characteristics for this part

Specification	FS45MR12W1M1B11BOMA1

Configuration	6 N-Channel (3-Phase Bridge)
Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	1.2 kV
Drain to Source Voltage (Vdss)	1200 V
Gate Charge (Qg) (Max) @ Vgs	62 nC
Input Capacitance (Ciss) (Max) @ Vds	1840 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	Module
Rds On (Max) @ Id, Vgs [Max]	45 mOhm
Supplier Device Package	AG-EASY1BM-2
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id	5.55 V

Part	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Mounting Type	Package / Case	Configuration	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C
INFINEON FS45MR12W1M1B11BOMA1	45 mOhm	AG-EASY1BM-2	5.55 V	1.2 kV	1200 V	Chassis Mount	Module	6 N-Channel (3-Phase Bridge)	1840 pF	62 nC	Silicon Carbide (SiC)	-40 °C	150 °C	25 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 1200V (1.2kV) 25A (Tj) Chassis Mount AG-EASY1BM-2

Technical documentation and resources

No documents available