Discrete Semiconductor Products

RN2906FE(TE85L,F)

Active

TRANS 2PNP PREBIAS 0.1W ES6

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

TRANS 2PNP PREBIAS 0.1W ES6

Technical Specifications

Parameters and characteristics for this part

Specification	RN2906FE(TE85L,F)

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Frequency - Transition	200 MHz
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Power - Max [Max]	100 mW
Resistor - Base (R1)	4.7 kOhms
Resistor - Emitter Base (R2)	47 kOhms
Supplier Device Package	ES6
Transistor Type	2 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Bipolar Transistors, PNP x 2 Bias Resistor Built-in Transistors (BRT), 4.7 kΩ/47 kΩ, SOT-363(US6)

Part	Grade	Frequency - Transition	Package / Case	Resistor - Base (R1)	Power - Max [Max]	Transistor Type	Qualification	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Resistor - Emitter Base (R2)	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]
Toshiba Semiconductor and Storage RN2906,LXHF(CT	Automotive	200 MHz	6-TSSOP SC-88 SOT-363	4.7 kOhms	200 mW	2 PNP - Pre-Biased (Dual)	AEC-Q101	300 mV	500 nA	Surface Mount	80	47 kOhms	100 mA	US6	50 V
Toshiba Semiconductor and Storage RN2906FE(TE85L,F)		200 MHz	SOT-563 SOT-666	4.7 kOhms	100 mW	2 PNP - Pre-Biased (Dual)		300 mV	100 nA	Surface Mount	80	47 kOhms	100 mA	ES6	50 V
Toshiba Semiconductor and Storage RN2906FE,LF(CT		200 MHz	SOT-563 SOT-666	4.7 kOhms	100 mW	2 PNP - Pre-Biased (Dual)		300 mV	500 nA	Surface Mount	80	47 kOhms	100 mA	ES6	50 V
Toshiba Semiconductor and Storage RN2906,LF		200 MHz	6-TSSOP SC-88 SOT-363	4.7 kOhms	200 mW	2 PNP - Pre-Biased (Dual)		300 mV	500 nA	Surface Mount	80	47 kOhms	100 mA	US6	50 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar Transistors, PNP x 2 Bias Resistor Built-in Transistors (BRT), 4.7 kΩ/47 kΩ, SOT-363(US6)

Technical documentation and resources