Bipolar Transistors, PNP x 2 Bias Resistor Built-in Transistors (BRT), 4.7 kΩ/47 kΩ, SOT-363(US6)
Bipolar Transistors, PNP x 2 Bias Resistor Built-in Transistors (BRT), 4.7 kΩ/47 kΩ, SOT-363(US6)
Bipolar Transistors, PNP x 2 Bias Resistor Built-in Transistors (BRT), 4.7 kΩ/47 kΩ, SOT-363(US6)
| Part | Grade | Frequency - Transition | Package / Case | Resistor - Base (R1) | Power - Max [Max] | Transistor Type | Qualification | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) [Max] | Mounting Type | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Resistor - Emitter Base (R2) | Current - Collector (Ic) (Max) [Max] | Supplier Device Package | Voltage - Collector Emitter Breakdown (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | Automotive | 200 MHz | 6-TSSOP SC-88 SOT-363 | 4.7 kOhms | 200 mW | 2 PNP - Pre-Biased (Dual) | AEC-Q101 | 300 mV | 500 nA | Surface Mount | 80 | 47 kOhms | 100 mA | US6 | 50 V |
 Toshiba Semiconductor and Storage | 200 MHz | SOT-563 SOT-666 | 4.7 kOhms | 100 mW | 2 PNP - Pre-Biased (Dual) | 300 mV | 100 nA | Surface Mount | 80 | 47 kOhms | 100 mA | ES6 | 50 V | ||
Toshiba Semiconductor and Storage | 200 MHz | SOT-563 SOT-666 | 4.7 kOhms | 100 mW | 2 PNP - Pre-Biased (Dual) | 300 mV | 500 nA | Surface Mount | 80 | 47 kOhms | 100 mA | ES6 | 50 V | ||
 Toshiba Semiconductor and Storage | 200 MHz | 6-TSSOP SC-88 SOT-363 | 4.7 kOhms | 200 mW | 2 PNP - Pre-Biased (Dual) | 300 mV | 500 nA | Surface Mount | 80 | 47 kOhms | 100 mA | US6 | 50 V |