Discrete Semiconductor Products

DD1000S33HE3BOSA1

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DIODE MOD GP 3300V AGIHVB130-3

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Discrete Semiconductor Products

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DIODE MOD GP 3300V AGIHVB130-3

Technical Specifications

Parameters and characteristics for this part

Specification	DD1000S33HE3BOSA1

Current - Average Rectified (Io) (per Diode)	1000 A
Diode Configuration	2 Independent
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	Module
Speed [Min]	200 mA, 500 ns
Supplier Device Package	AG-IHVB130-3
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	3300 V
Voltage - Forward (Vf) (Max) @ If	3.85 V

Part	Speed [Min]	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Technology	Package / Case	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Diode Configuration	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io) (per Diode)
INFINEON DD1000S33HE3BPSA1	200 mA 500 ns	AG-IHVB130-3	3300 V	Chassis Mount	Standard	Module	-40 °C	150 °C	2 Independent	3.85 V
INFINEON DD1000S33HE3BOSA1	200 mA 500 ns	AG-IHVB130-3	3300 V	Chassis Mount	Standard	Module	-40 °C	150 °C	2 Independent	3.85 V	1000 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Diode Array 2 Independent 3300 V 1000A (DC) Chassis Mount Module

Technical documentation and resources