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SOT1220
Discrete Semiconductor Products

PMPB29XNEAX

Active
Nexperia USA Inc.

30 V, N-CHANNEL TRENCH MOSFET

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Search across all available documentation for this part.

DocumentsReflow soldering profileplastic, leadless thermal enhanced ultra thin small outline package with side-wettable flanks (SWF); 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body+9
SOT1220
Discrete Semiconductor Products

PMPB29XNEAX

Active
Nexperia USA Inc.

30 V, N-CHANNEL TRENCH MOSFET

Deep-Dive with AI

DocumentsReflow soldering profileplastic, leadless thermal enhanced ultra thin small outline package with side-wettable flanks (SWF); 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body+9

Technical Specifications

Parameters and characteristics for this part

SpecificationPMPB29XNEAX
Current - Continuous Drain (Id) @ 25°C5 A
GradeAutomotive
Power Dissipation (Max)1.7 W
QualificationAEC-Q101
Vgs (Max) [Max]8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.17
3000$ 0.17

Description

General part information

PMPB29XNEA Series

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.