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30 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Power Dissipation (Max) | Grade | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) [Max] | Qualification |
|---|---|---|---|---|---|
Nexperia USA Inc. | 1.7 W | Automotive | 5 A | 8 V | AEC-Q101 |