Discrete Semiconductor Products

IMW65R015M2HXKSA1

Active

INFINEON

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 93 A, 650 V, 0.0132 OHM, TO-247

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet

Discrete Semiconductor Products

IMW65R015M2HXKSA1

Active

INFINEON

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 93 A, 650 V, 0.0132 OHM, TO-247

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IMW65R015M2HXKSA1

Current - Continuous Drain (Id) @ 25°C	93 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	15 V, 20 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	79 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2792 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	341 W
Rds On (Max) @ Id, Vgs	13.2 mOhm
Supplier Device Package	PG-TO247-3-40
Technology	SiC (Silicon Carbide Junction Transistor)
Vgs (Max)	-7 V, 23 V
Vgs(th) (Max) @ Id	5.6 V

IMW65R015 Series

Part	Technology	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Supplier Device Package	FET Type	Package / Case
INFINEON IMW65R015M2HXKSA1	SiC (Silicon Carbide Junction Transistor)	15 V 20 V	93 A	175 °C	-55 °C	79 nC	-7 V 23 V	13.2 mOhm	341 W	5.6 V	650 V	2792 pF	Through Hole	PG-TO247-3-40	N-Channel	TO-247-3

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	175	$ 18.64
	Tube	1	$ 21.00
		10	$ 19.30
		30	$ 18.50
		120	$ 16.30
		270	$ 15.50
		510	$ 14.50
Newark	Each	1	$ 17.87
		10	$ 14.20
		25	$ 13.12
		50	$ 12.65
		100	$ 12.17
		480	$ 12.16

Description

General part information

IMW65R015 Series

The CoolSiC™ MOSFET 650 V, 15 mΩ G2 in a TO-247-3 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.

Documents

Technical documentation and resources