IMW65R015 Series
Manufacturer: INFINEON
Beta
⌘K
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 93 A, 650 V, 0.0132 OHM, TO-247
| Part | Technology | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Max] | Operating Temperature [Min] | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Mounting Type | Supplier Device Package | FET Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | SiC (Silicon Carbide Junction Transistor) | 15 V 20 V | 93 A | 175 °C | -55 °C | 79 nC | -7 V 23 V | 13.2 mOhm | 341 W | 5.6 V | 650 V | 2792 pF | Through Hole | PG-TO247-3-40 | N-Channel | TO-247-3 |