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8 SOIC
Discrete Semiconductor Products

NTMS4176PR2G

Obsolete
ON Semiconductor

POWER MOSFET 30V 9.6A 30 MOHM SINGLE P-CHANNEL SO-8

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8 SOIC
Discrete Semiconductor Products

NTMS4176PR2G

Obsolete
ON Semiconductor

POWER MOSFET 30V 9.6A 30 MOHM SINGLE P-CHANNEL SO-8

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNTMS4176PR2G
Current - Continuous Drain (Id) @ 25°C5.5 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs17 nC
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Power Dissipation (Max)810 mW
Rds On (Max) @ Id, Vgs18 mOhm
Supplier Device Package8-SOIC
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

NTMS4176P Series

Power MOSFET 30 V, 18 A, Single N-Channel, SO-8

Documents

Technical documentation and resources