
Discrete Semiconductor Products
NTMS4176PR2G
ObsoleteON Semiconductor
POWER MOSFET 30V 9.6A 30 MOHM SINGLE P-CHANNEL SO-8

Discrete Semiconductor Products
NTMS4176PR2G
ObsoleteON Semiconductor
POWER MOSFET 30V 9.6A 30 MOHM SINGLE P-CHANNEL SO-8
Technical Specifications
Parameters and characteristics for this part
| Specification | NTMS4176PR2G |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 5.5 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Power Dissipation (Max) | 810 mW |
| Rds On (Max) @ Id, Vgs | 18 mOhm |
| Supplier Device Package | 8-SOIC |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
NTMS4176P Series
Power MOSFET 30 V, 18 A, Single N-Channel, SO-8
Documents
Technical documentation and resources