Power MOSFET 30V 9.6A 30 mOhm Single P-Channel SO-8
Power MOSFET 30V 9.6A 30 mOhm Single P-Channel SO-8
| Part | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Supplier Device Package | FET Type | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Package / Case | Package / Case [y] | Package / Case [x] | Mounting Type | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Technology | Power Dissipation (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 ON Semiconductor | 18 mOhm | 810 mW | 2.5 V | 8-SOIC | P-Channel | 17 nC | -55 °C | 150 °C | 25 V | 5.5 A | 8-SOIC | 3.9 mm | 0.154 in | Surface Mount | 30 V | 4.5 V 10 V | MOSFET (Metal Oxide) | |||
ON Semiconductor | 4.5 mOhm | 2.5 V | 8-SOIC | N-Channel | -55 °C | 150 °C | 20 V | 11 A | 8-SOIC | 3.9 mm | 0.154 in | Surface Mount | 30 V | 4.5 V 10 V | MOSFET (Metal Oxide) | 930 mW | 45 nC | 6000 pF | ||
ON Semiconductor | 19 mOhm | 1.38 W | 450 mV | 8-SOIC | P-Channel | -55 °C | 150 °C | 8 V | 6.9 A | 8-SOIC | 3.9 mm | 0.154 in | Surface Mount | 20 V | 2.5 V 4.5 V | MOSFET (Metal Oxide) | 32 nC | 3200 pF |