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INFINEON ITS4140NHUMA1
Discrete Semiconductor Products

STN1NF20

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STMicroelectronics

N-CHANNEL 200 V, 1.1 OHM, 1 A STRIPFET(TM) II POWER MOSFET IN SOT-223 PACKAGE

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INFINEON ITS4140NHUMA1
Discrete Semiconductor Products

STN1NF20

Active
STMicroelectronics

N-CHANNEL 200 V, 1.1 OHM, 1 A STRIPFET(TM) II POWER MOSFET IN SOT-223 PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTN1NF20
Current - Continuous Drain (Id) @ 25°C1 A
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs5.7 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]90 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-261AA, TO-261-4
Power Dissipation (Max)2 W
Rds On (Max) @ Id, Vgs1.5 Ohm
Supplier Device PackageSOT-223
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.70
10$ 0.61
100$ 0.42
500$ 0.35
1000$ 0.30
2000$ 0.27
Digi-Reel® 1$ 0.70
10$ 0.61
100$ 0.42
500$ 0.35
1000$ 0.30
2000$ 0.27
N/A 24566$ 0.87
Tape & Reel (TR) 4000$ 0.27
8000$ 0.25
12000$ 0.23
28000$ 0.23
NewarkEach (Supplied on Cut Tape) 1$ 1.19
10$ 0.81
25$ 0.73
50$ 0.66
100$ 0.58
250$ 0.53
500$ 0.48
1000$ 0.45

Description

General part information

STN1NF20 Series

This Power MOSFET has been developed using STMicroelectronics’ unique STripFET™ process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.