Discrete Semiconductor Products

PMDT290UCEH

NRND

Nexperia USA Inc.

MOSFET N/P-CH 20V 0.8A SOT666

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Discrete Semiconductor Products

PMDT290UCEH

NRND

Nexperia USA Inc.

MOSFET N/P-CH 20V 0.8A SOT666

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	PMDT290UCEH

Configuration	N and P-Channel Complementary
Current - Continuous Drain (Id) @ 25°C	550 mA
Current - Continuous Drain (Id) @ 25°C	800 mA
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Qg) (Max) @ Vgs	0.68 nC, 1.14 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	83 pF, 87 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-563, SOT-666
Power - Max	1.09 W, 330 mW
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	850 mOhm, 380 mOhm
Supplier Device Package	SOT-666
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.3 V, 950 mV

PMDT290 Series

20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET

Part	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Grade	Input Capacitance (Ciss) (Max) @ Vds [Max]	Qualification	Technology	Package / Case	Vgs(th) (Max) @ Id	Configuration	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Power - Max [Max]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	FET Feature
Nexperia USA Inc. PMDT290UNEYL	SOT-666	800 mA	Automotive	83 pF	AEC-Q101	MOSFET (Metal Oxide)	SOT-563 SOT-666	950 mV	2 N-Channel (Dual)	0.68 nC	380 mOhm	Surface Mount	150 °C	-55 °C	500 mW	20 V
Nexperia USA Inc. PMDT290UCEH	SOT-666		Automotive		AEC-Q101	MOSFET (Metal Oxide)	SOT-563 SOT-666	1.3 V 950 mV	N and P-Channel Complementary	0.68 nC 1.14 nC	380 mOhm 850 mOhm	Surface Mount	150 °C	-55 °C		20 V	550 mA	800 mA	83 pF 87 pF	1.09 W 330 mW
Nexperia USA Inc. PMDT290UCE,115	SOT-666	550 mA 800 mA	Automotive	83 pF	AEC-Q101	MOSFET (Metal Oxide)	SOT-563 SOT-666	950 mV	N and P-Channel	0.68 nC	380 mOhm	Surface Mount	150 °C	-55 °C	500 mW	20 V					Logic Level Gate

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.14
	Tape & Reel (TR)	4000	$ 0.11
		8000	$ 0.10
		12000	$ 0.09
		28000	$ 0.09
		100000	$ 0.09

Description

General part information

PMDT290 Series

Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Documents

Technical documentation and resources